Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs

D. Xiao, D. Schreurs, R. ElKashlan, Y. Zhang, A. Cooman, A. Khaled, D. Smellie, A. Alian, M. Asad, B. Parvais, P. Wambacq, U. Peralagu, and N. Collaert.